Roving Networks / Microchip Technology / 1N5809US

Image is for reference, please contact us to get the real picture

Manufacturer Part Number:	1N5809US
Manufacturer:	Roving Networks / Microchip Technology
Part of Description:	DIODE GEN PURP 100V 3A B-MELF
Lead Free Status / RoHS Status:	Lead Free / RoHS Compliant
Stock Condition:	1618 In Stock
Ship From:	Hong Kong
Shipment Way:	DHL/Fedex/TNT/UPS/EMS

REMARK: Buy the 1N5809US Roving Networks / Microchip Technology on xunyun-ic.com, we are Roving Networks / Microchip Technology Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the 1N5809US within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	-
Package	Bulk
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io)	3A
Voltage - Forward (Vf) (Max) @ If	875 mV @ 4 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	30 ns
Current - Reverse Leakage @ Vr	5 µA @ 100 V
Capacitance @ Vr, F	60pF @ 10V, 1MHz
Mounting Type	Surface Mount
Package / Case	SQ-MELF, B
Supplier Device Package	B, SQ-MELF
Operating Temperature - Junction	-65°C ~ 175°C

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 1618

Minimum: 1

Call for price or sumbit a RFQ

Popular Models

	RBR3MM30ATR ROHM Semiconductor
	SRA2060HC0G TSC (Taiwan Semiconductor)
	FSV240AF Sanyo Semiconductor/ON Semiconductor
	MBRS10150 MNG TSC (Taiwan Semiconductor)
	1N5819RLG Rochester Electronics
	CDBB340LR-HF Comchip Technology
	VBT5200-E3/4W Vishay General Semiconductor – Diodes Division
	NTE5952 NTE Electronics, Inc.
	NRVBS540T3G Sanyo Semiconductor/ON Semiconductor
	V30100SG-M3/4W Vishay General Semiconductor – Diodes Division