WNSC08650T6J - WeEn Semiconductors Co., Ltd

Manufacturer Part Number:WNSC08650T6J
Manufacturer:WeEn Semiconductors Co., Ltd
Part of Description:SILICON CARBIDE POWER DIODE
Lead Free Status / RoHS Status:Lead Free / RoHS Compliant
Stock Condition:1697 In Stock
Ship From:Hong Kong
Shipment Way:DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the WNSC08650T6J WeEn Semiconductors Co., Ltd on xunyun-ic.com, WeEn Semiconductors Co., Ltd, is the global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital). WeEn Semiconductors was officially opened on 19th January, 2016 with the business and operations center located in Shanghai, China. WeEn Semiconduct...

Specification

TypeDescription
Series-
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 µA @ 650 V
Capacitance @ Vr, F267pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / Case4-VDFN Exposed Pad
Supplier Device Package5-DFN (8x8)
Operating Temperature - Junction175°C (Max)
All the Electronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 1697

Minimum: 1

Price: $3.03000

Related WeEn Semiconductors Co., Ltd Components

RGP10GEHE3/53
RGP10GEHE3/53 Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 400V 1A DO204AL...

STTH2L06A
STTH2L06A STMicroelectronics

DIODE GEN PURP 600V 2A SMA...

1N4006GP-M3/54
1N4006GP-M3/54 Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 800V 1A DO204AL...

FML-G14S
FML-G14S Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 5A TO220F-2L...

UH6PJHM3_A/I
UH6PJHM3_A/I Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 6A TO277A...

1N6625US
1N6625US Roving Networks / Microchip Technology

DIODE GEN PURP 1.1KV 1A A-MELF...

Top