ROHM Semiconductor / BSM600C12P3G201

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REMARK: Buy the BSM600C12P3G201 ROHM Semiconductor on xunyun-ic.com, we are ROHM Semiconductor Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the BSM600C12P3G201 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	-
Package	Tray
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	600A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	28000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2460W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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