DF200R12W1H3B27BOMA1 - IR (Infineon Technologies)

Manufacturer Part Number:DF200R12W1H3B27BOMA1
Manufacturer:IR (Infineon Technologies)
Part of Description:IGBT MOD 1200V 30A 375W
Lead Free Status / RoHS Status:Lead Free / RoHS Compliant
Stock Condition:134 In Stock
Ship From:Hong Kong
Shipment Way:DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the DF200R12W1H3B27BOMA1 IR (Infineon Technologies) on xunyun-ic.com, On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in var...

Specification

TypeDescription
Series-
PackageBulk
Part StatusActive
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)30 A
Power - Max375 W
Vce(on) (Max) @ Vge, Ic1.3V @ 15V, 30A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce2 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule
All the Electronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 134

Minimum: 1

Price: $54.61750

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