Rochester Electronics / BSO615CGHUMA1

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Type	Description
Series	SIPMOS®
Package	Bulk
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs	110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 20µA, 2V @ 450µA
Gate Charge (Qg) (Max) @ Vgs	22.5nC, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	380pF, 460pF @ 25V
Power - Max	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	PG-DSO-8

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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