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| Manufacturer Part Number: | DF11MR12W1M1B11BOMA1 |
| Manufacturer: | Rochester Electronics |
| Part of Description: | IGBT MODULE |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | 76 In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
| Type | Description |
|---|---|
| Series | * |
| Package | Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 15V |
| Vgs(th) (Max) @ Id | 5.5V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
| Power - Max | 20mW |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
Stock Status: 76
Minimum: 1
Price: $120.00000
