GPA030A135MN-FDR - SemiQ

Manufacturer Part Number:GPA030A135MN-FDR
Manufacturer:SemiQ
Part of Description:IGBT 1350V 60A 329W TO3PN
Lead Free Status / RoHS Status:Lead Free / RoHS Compliant
Stock Condition:2566 In Stock
Ship From:Hong Kong
Shipment Way:DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the GPA030A135MN-FDR SemiQ on xunyun-ic.com, SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form. SemiQ also offers power conversion application expertise which ...

Specification

TypeDescription
Series-
PackageTube
Part StatusObsolete
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1350 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)90 A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
Power - Max329 W
Switching Energy4.4mJ (on), 1.18mJ (off)
Input TypeStandard
Gate Charge300 nC
Td (on/off) @ 25°C30ns/145ns
Test Condition600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)450 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3
Supplier Device PackageTO-3PN
All the Electronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 2566

Minimum: 1

Call for price or submit a RFQ

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