Rochester Electronics / NTP8G202NG

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Type	Description
Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V
Rds On (Max) @ Id, Vgs	350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id	2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 4.5 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	65W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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