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| Manufacturer Part Number: | SIHB12N60ET1-GE3 |
| Manufacturer: | Vishay / Siliconix |
| Part of Description: | MOSFET N-CH 600V 12A TO263 |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | 2343 In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
| Type | Description |
|---|---|
| Series | E |
| Package | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 937 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 147W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D²Pak) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Stock Status: 2343
Minimum: 1
Price: $2.17000
