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| Manufacturer Part Number: | IPB025N10N3GE8187ATMA1 |
| Manufacturer: | IR (Infineon Technologies) |
| Part of Description: | MOSFET N-CH 100V 180A TO263-7 |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | 1380 In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
| Type | Description |
|---|---|
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
Stock Status: 1380
Minimum: 1
Price: $3.70982
