IPP12CN10N G - IR (Infineon Technologies)

Manufacturer Part Number:IPP12CN10N G
Manufacturer:IR (Infineon Technologies)
Part of Description:MOSFET N-CH 100V 67A TO220-3
Lead Free Status / RoHS Status:Lead Free / RoHS Compliant
Stock Condition:4173 In Stock
Ship From:Hong Kong
Shipment Way:DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the IPP12CN10N G IR (Infineon Technologies) on xunyun-ic.com, On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in var...

Specification

TypeDescription
SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4320 pF @ 50 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3
All the Electronics Components will be packing in very safely by ESD antistatic protection.

package

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