IMBG120R350M1HXTMA1 - IR (Infineon Technologies)

Manufacturer Part Number:IMBG120R350M1HXTMA1
Manufacturer:IR (Infineon Technologies)
Part of Description:TRANS SJT N-CH 1.2KV 4.7A TO263
Lead Free Status / RoHS Status:Lead Free / RoHS Compliant
Stock Condition:655 In Stock
Ship From:Hong Kong
Shipment Way:DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the IMBG120R350M1HXTMA1 IR (Infineon Technologies) on xunyun-ic.com, On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in var...

Specification

TypeDescription
SeriesCoolSiC™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1.2 kV
Current - Continuous Drain (Id) @ 25°C4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs5.9 nC @ 18 V
Vgs (Max)+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds196 pF @ 800 V
FET FeatureStandard
Power Dissipation (Max)65W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-12
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
All the Electronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 655

Minimum: 1

Price: $8.22000

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