SCTW35N65G2VAG - STMicroelectronics

Manufacturer Part Number:SCTW35N65G2VAG
Manufacturer:STMicroelectronics
Part of Description:SICFET N-CH 650V 45A HIP247
Lead Free Status / RoHS Status:Lead Free / RoHS Compliant
Stock Condition:390 In Stock
Ship From:Hong Kong
Shipment Way:DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the SCTW35N65G2VAG STMicroelectronics on xunyun-ic.com, STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) por...

Specification

TypeDescription
SeriesAutomotive, AEC-Q101
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Rds On (Max) @ Id, Vgs67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 20 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 400 V
FET Feature-
Power Dissipation (Max)240W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
All the Electronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 390

Minimum: 1

Price: $14.67000

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