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| Manufacturer Part Number: | TPN1110ENH,L1Q |
| Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
| Part of Description: | MOSFET N-CH 200V 7.2A 8TSON |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | 3160 In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
| Type | Description |
|---|---|
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 114mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Package / Case | 8-PowerVDFN |
Stock Status: 3160
Minimum: 1
Price: $1.60000
