SIDR610DP-T1-GE3 - Vishay / Siliconix

Manufacturer Part Number:SIDR610DP-T1-GE3
Manufacturer:Vishay / Siliconix
Part of Description:MOSFET N-CH 200V 8.9A/39.6A PPAK
Lead Free Status / RoHS Status:Lead Free / RoHS Compliant
Stock Condition:1432 In Stock
Ship From:Hong Kong
Shipment Way:DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the SIDR610DP-T1-GE3 Vishay / Siliconix on xunyun-ic.com, Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment in the industrial, computing, ...

Specification

TypeDescription
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 100 V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8
All the Electronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 1432

Minimum: 1

Price: $3.58000

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