Microsemi / APT50M80B2VRG

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Type	Description
Series	POWER MOS V®
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	80mOhm @ 29A, 10V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	423 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	8797 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	T-MAX™ [B2]
Package / Case	TO-247-3 Variant

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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