Rochester Electronics / PMV56XN,215

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Type	Description
Series	TrenchMOS™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3.76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	650mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.4 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.92W (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

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