IR (Infineon Technologies) / IMW120R030M1HXKSA1

Manufacturer Part Number: IMW120R030M1HXKSA1
Manufacturer: IR (Infineon Technologies)
Part of Description: SICFET N-CH 1.2KV 56A TO247-3
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 668 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
Buy the IMW120R030M1HXKSA1 IR (Infineon Technologies) on xunyun-ic.com, we are IR (Infineon Technologies) Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the IMW120R030M1HXKSA1 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Specification

TypeDescription
SeriesCoolSiC™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1.2 kV
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 18 V
Vgs (Max)+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds2.12 nF @ 800 V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-41
Package / CaseTO-247-3
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

Top