Rochester Electronics / FQB4N80TM

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Manufacturer Part Number:	FQB4N80TM
Manufacturer:	Rochester Electronics
Part of Description:	POWER FIELD-EFFECT TRANSISTOR, 3
Lead Free Status / RoHS Status:	Lead Free / RoHS Compliant
Stock Condition:	2400 In Stock
Ship From:	Hong Kong
Shipment Way:	DHL/Fedex/TNT/UPS/EMS

REMARK: Buy the FQB4N80TM Rochester Electronics on xunyun-ic.com, we are Rochester Electronics Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the FQB4N80TM within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	QFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 130W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

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Stock Status: 2400

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