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| Manufacturer Part Number: | IMW120R350M1HXKSA1 |
| Manufacturer: | IR (Infineon Technologies) |
| Part of Description: | SICFET N-CH 1.2KV 4.7A TO247-3 |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | 736 In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
| Type | Description |
|---|---|
| Series | CoolSiC™ |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 455mOhm @ 2A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
Stock Status: 736
Minimum: 1
Price: $7.23000
