IR (Infineon Technologies) / IPP600N25N3GXKSA1

Image is for reference, please contact us to get the real picture

REMARK: Buy the IPP600N25N3GXKSA1 IR (Infineon Technologies) on xunyun-ic.com, we are IR (Infineon Technologies) Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the IPP600N25N3GXKSA1 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	OptiMOS™
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2350 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 1883

Minimum: 1

Call for price or sumbit a RFQ

Popular Models

	PSMN013-100YSEX Nexperia
	FDMS86520 Sanyo Semiconductor/ON Semiconductor
	PMZ370UNE315 Rochester Electronics
	IRLD120 Vishay / Siliconix
	AOT12N65_001 Alpha and Omega Semiconductor, Inc.
	GA04JT17-247 GeneSiC Semiconductor
	HUF75339G3 Rochester Electronics
	IPP60R165CP Rochester Electronics
	PSMN015-100P,127 Nexperia
	TK5A65D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation