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| Manufacturer Part Number: | CSD25213W10 |
| Manufacturer: | Texas Instruments |
| Part of Description: | MOSFET P-CH 20V 1.6A 4DSBGA |
| Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
| Stock Condition: | 10672 In Stock |
| Ship From: | Hong Kong |
| Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
| Type | Description |
|---|---|
| Series | NexFET™ |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 4.5 V |
| Vgs (Max) | -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 478 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DSBGA (1x1) |
| Package / Case | 4-UFBGA, DSBGA |
Stock Status: 10672
Minimum: 1
Price: $0.47000
