Microsemi / APT9F100S

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Type	Description
Series	POWER MOS 8™
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.6Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2606 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	337W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D3Pak
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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