Rochester Electronics / CSD13303W1015

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Type	Description
Series	NexFET™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	31A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	20mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.7 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	715 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	1.65W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DSBGA
Package / Case	6-UFBGA, DSBGA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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