Vishay / Siliconix / SISH536DN-T1-GE3

Manufacturer Part Number: SISH536DN-T1-GE3
Manufacturer: Vishay / Siliconix
Part of Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 3501 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesTrenchFET® Gen V
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C24.7A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.57W (Ta), 26.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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