Vishay / Siliconix / SIDR626DP-T1-GE3

Manufacturer Part Number: SIDR626DP-T1-GE3
Manufacturer: Vishay / Siliconix
Part of Description: MOSFET N-CH 60V 42.8A/100A PPAK
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 45 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C42.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs102 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5130 pF @ 30 V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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